MBR7.. Series
Vishay High Power Products
Schottky Rectifier, 7.5 A
FEATURES
• 150 °C T
J
operation
Base
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• High frequency operation
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
TO-220AC
1
Cathode
3
Anode
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
7.5 A
35 to 45 V
15 mA at 125 °C
The MBR7.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
7.5 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
7.5
35 to 45
690
0.57
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
MBR735
35
MBR745
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
7.5
690
A
150
7
2
mJ
A
UNITS
A
Surge applied at rated load condition half wave
single phase 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Document Number: 93456
Revision: 22-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
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