MBR30H150CT, MBRF30H150CT & SB30H150CT-1
Vishay General Semiconductor
100
10 000
Instantaneous Forward Current (A)
10
T
J
= 125 °C
Junction Capacitance (pF)
T
J
= 175 °C
1000
T
J
= 75 °C
T
J
= 25 °C
1
100
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
T
J
= 175 °C
1000
T
J
= 125 °C
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
MBRF
10
T
J
= 75 °C
1
1
MBR, MBRB
0.1
T
J
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88865
Revision: 18-Apr-08
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