MBR30H150CT, MBRF30H150CT & MBRB30H150CT-1 Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25°C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
Total device
Per leg
I
F(AV)
MBR30H150CT
150
150
150
30
15
260
1.0
10
20
10,000
–65 to +175
4500
(1)
3500
(2)
1500
(3)
Unit
V
V
V
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at t
p
= 2µs, 1KH
Z
Peak non-repetitive reverse surge energy per leg
(8/20µs waveform)
Non-repetitive avalanche energy per leg
at 25°C, I
AS
= 2.0A, L=10mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1 second, RH
≤
30%
I
FSM
I
RRM
E
RSM
E
AS
dv/dt
T
J
, T
STG
V
ISOL
A
A
mJ
mJ
V/µs
°C
V
Electrical Characteristics
(T
Parameter
Maximum instantaneous
forward voltage per leg at
(4)
:
I
F
=
I
F
=
I
F
=
I
F
=
15A,
15A,
30A,
30A,
C
= 25°C unless otherwise noted)
Symbol
T
C
=
T
C
=
T
C
=
T
C
=
25°C
125°C
25°C
125°C
Value
0.90
0.75
0.99
0.86
5.0
1.0
Unit
V
F
V
µA
mA
Maximum reverse current per leg
at working peak reverse voltage
T
J
= 25°C
T
J
= 125°C
I
R
Thermal Characteristics
(T
Parameter
Typical thermal resistance per leg
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
MBR
1.7
MBRF
4.0
MBRB
1.7
Unit
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88865
24-Dec-03
VISHAY [ VISHAY TELEFUNKEN ]
