New Product
MBR(F,B)2090CT & MBR(F,B)20100CT
Vishay General Semiconductor
100
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
T
J
= 150 °C
10
T
J
= 125 °C
1
10
1
0.1
T
J
= 25 °C
MBR(B)
0.1
0.01
0.1
1
10
100
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 125 °C
1
Junction to Case
1
0.1
0.1
0.01
MBRF
0.001
0.1
1
10
100
0.01
T
J
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10 000
T
J
= 25 °C
f = 1 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
1
10
100
Reverse
Voltage
(V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89033
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
