New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
Dual Common-Cathode High Voltage Schottky Rectifier
TMBS
®
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
2
1
TO-220AB
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
2 x 5.0 A
90 V, 100 V
120 A
0.75 V
150 °C
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 105 °C
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
T
J
, T
STG
MBR1090CT
90
90
90
10
5.0
120
60
0.5
10 000
- 65 to + 150
MBR10100CT
100
100
100
UNIT
V
V
V
A
A
mJ
A
V/µs
°C
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t
p
= 2 µs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number: 89125
Revision: 26-Apr-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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