MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
1
T
J
= 25 °C
0.1
MBR1035 - MBR1045
MBR1050 - MBR1060
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
Junction Capacitance (pF)
1000
MBR1035 - MBR1045
MBR1050 - MBR1060
100
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
10
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
100
Instantenous Reverse Current (mA)
10
1
T
J
= 75 °C
0.1
T
J
= 25 °C
0.01
MBR1035 - MBR1045
MBR1050 - MBR1060
1
0.001
0
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88669
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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