MB2S, MB4S & MB6S
Vishay General Semiconductor
10
30
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
1.5
25
20
15
0.1
Pulse
Width
= 300
µs
1 % Duty Cycle
0.01
0.3
10
5
0
0.5
0.7
0.9
1.1
1.3
0.1
1
10
100
1000
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
Instantaneous Reverse Leakage
Current (µA)
10
T
J
= 125 °C
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.029 (0.74)
0.017 (0.43)
TO-269AA (MBS)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0 to
8°
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.105 (2.67)
0.095 (2.41)
0.106 (2.70)
0.090 (2.30)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.114 (2.90)
0.094 (2.40)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
Document Number: 88661
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
