LL4148 / LL4448
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 5 mA
I
F
= 50 mA
I
F
= 100 mA
Reverse current
V
R
= 20 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1MHz, V
HF
= 50 mV
V
HF
= 2 V, f = 100 MHz
I
F
= I
R
= 10 mA,
i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
I
R
I
R
I
R
V
(BR)
C
D
η
r
t
rr
t
rr
45
8
4
100
4
Min
0.62
0.86
0.93
Typ.
Max
0.72
1
1
25
50
5
VISHAY
Unit
V
V
V
nA
µA
µA
V
pF
%
ns
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
1000
LL4148
I
F
- Forward Current ( mA)
1000
LL4448
I
F
- Forward Current ( mA)
100
Scattering Limit
10
100
Scattering Limit
10
1
T
j
= 25
°
C
0.1
0
0.4
0.8
1.2
1.6
2.0
1
T
j
= 25
°
C
0.1
0
0.4
0.8
1.2
1.6
2.0
94 9096
V
F
- Forward Voltage ( V )
94 9097
V
F
- Forward Voltage ( V )
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 85557
Rev. 1.7, 06-Feb-04
VISHAY [ VISHAY TELEFUNKEN ]
