LL4148, LL4448
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
I
F
= 5 mA
Forward voltage
I
F
= 50 mA
I
F
= 100 mA
V
R
= 20 V
Reverse current
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
Breakdown voltage
Diode capacitance
I
R
= 100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= 10 mA,
i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Part
LL4448
LL4148
LL4448
Symbol
V
F
V
F
V
F
I
R
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
100
4
8
4
Min.
620
860
930
Typ.
Max.
720
1000
1000
25
50
5
Unit
mV
mV
mV
nA
µA
µA
V
pF
ns
ns
Reverse recovery time
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1000
LL4148
1000
I
F
- Forward Current (mA)
I
R
- Reverse Current (nA)
100
Scattering Limit
10
T
j
= 25 °C
100
Scattering Limit
10
1
T
j
= 25 °C
0.1
0
0.4
0.8
1.2
1.6
2.0
1
1
94 9098
10
V
R
- Reverse
Voltage
(V)
100
94 9096
V
F
- Forward
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Reverse Current vs. Reverse Voltage
1000
C
D
- Diode Capacitance (pF)
LL4448
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.4
0.8
1.2
1.6
2.0
94 9099
I
F
- Forward Current (mA)
100
Scattering Limit
10
f = 1 MHz
T
j
= 25 °C
1
T
j
= 25
°
C
0.1
0.1
1
10
100
94 9097
V
F
- Forward
Voltage
(V)
V
R
- Reverse
Voltage
(V)
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85557
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.9, 01-Sep-10
VISHAY [ VISHAY TELEFUNKEN ]
