IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
5.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = - 250 µA
100
-
-
V
V/°C
V
-
0.12
-
1.0
-
-
-
-
-
-
-
2.0
100
25
VGS
=
10 V
-
nA
VDS = 100 V, VGS = 0 V
-
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
IDSS
µA
V
DS = 80 V, VGS = 0 V, TJ = 125 °C
-
-
250
0.54
0.76
-
VGS = 5.0 V
GS = 4.0 V
ID = 2.6 Ab
ID = 2.2 Ab
RDS(on)
gfs
Ω
V
-
Forward Transconductance
Dynamic
VDS = 50 V, ID = 2.6 A
2.3
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
250
80
15
-
-
VGS = 0 V,
V
DS = 25 V,
-
pF
nC
f = 1.0 MHz, see fig. 5
-
6.1
2.0
3.3
-
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 5.0 V
-
-
9.3
47
16
17
-
VDD = 50 V, ID = 5.6 A,
ns
R
G = 12 Ω, RD = 8.4 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contactc
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
4.3
17
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS =4.3 A, VGS = 0 Vb
-
-
-
-
2.5
130
0.65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
100
0.50
ns
µC
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91323
S-81304-Rev. A, 16-Jun-08