IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
20
3.3
11
Single
S
FEATURES
1.5
•
•
•
•
•
•
•
•
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9220/SiHFR9220)
Straight Lead (IRFUFU9220/SiHFU9220)
Available in Tape and Reel
P-Channel
Fast Switching
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
G
D
P-Channel MOSFET
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9220PbF
SiHFR9220-E3
IRFR9220
SiHFR9220
DPAK (TO-252)
IIRFR9220TRLPbF
a
SiHFR9220TL-E3
a
IRFR9220TRL
a
SiHFR9220TL
a
DPAK (TO-252)
IRFR9220TRRPbF
a
SiHFR9220TR-E3
a
IRFR9220TRR
a
SiHFR9220TR
a
DPAK (TO-252)
IRFR9220TRPbF
a
SiHFR9220T-E3
a
IRFR9220TR
a
SiHFR9220T
a
IPAK (TO-251)
IRFU9220PbF
SiHFU9220-E3
IRFU9220
SiHFU9220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 200
± 20
- 3.6
- 2.3
- 14
0.33
0.020
310
- 3.6
4.2
42
2.5
- 5.0
- 55 to + 150
260
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
I
AR
Repetitive Avalanche Current
a
E
AR
Repetitive Avalanche Energy
Maximum Power Dissipation
T
C
= 25 °C
P
D
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
e
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, Starting T
J
= 25 °C, L = 35 mH, R
G
= 25
Ω,
I
AS
= - 3.6 A (see fig. 12).
c. I
SD
≤
- 3.9 A, dI/dt
≤
95 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S-81411-Rev. A, 07-Jul-08
W/°C
mJ
A
mJ
W
V/ns
°C
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