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IRFR420 参数 Datasheet PDF下载

IRFR420图片预览
型号: IRFR420
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关
文件页数/大小: 8 页 / 1884 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
19
3.3
13
Single
D
FEATURES
500
3.0
• Dynamic dV/dt Rating
Available
• Repetitive Avalanche Rated
• Surface Mount (IRFR420/SiHFR420)
• Straight Lead (IRFU420/SiHFU420)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR420PbF
SiHFR420-E3
IRFR420
SiHFR420
DPAK (TO-252)
IRFR420TRPbF
a
SiHFR420T-E3
a
IRFR420TR
a
SiHFR420T
a
DPAK (TO-252)
IRFR120TRLPbF
a
SiHFR120TL-E3
a
IRFR120TRL
a
SiHFR120TL
a
IPAK (TO-251)
IRFU420PbF
SiHFU420-E3
IRFU420
SiHFU420
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91275
S-Pending-Rev. A, 21-Jul-08
T
C
= 25 °C
T
A
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 20
2.4
1.5
8.0
0.33
0.020
400
2.4
4.2
42
2.5
3.5
W/°C
mJ
A
mJ
W
V/ns
A
UNIT
V
WORK-IN-PROGRESS
www.vishay.com
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