IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
16
4.4
7.7
Single
D
FEATURES
100
0.27
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR120/SiHFR120)
• Straight Lead (IRFU120/SiHFU120)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR120PbF
SiHFR120-E3
IRFR120
SiHFR120
DPAK (TO-252)
IRFR120TRPbF
a
SiHFR120T-E3
a
IRFR120TR
a
SiHFR120T
a
DPAK (TO-252)
IRFR120TRRPbF
a
SiHFR120TR-E3
a
IRFR120TRR
a
SiHFR120TR
a
DPAK (TO-252)
IRFR120TRLPbF
a
SiHFR120TL-E3
a
IRFR120TRL
a
SiHFR120TL
a
IPAK (TO-251)
IRFU120PbF
SiHFU120-E3
IRFU120
SiHFU120
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
T
C
= 25 °C
Mount)
e
T
A
= 25 °C
Maximum Power Dissipation
Maximum Power Dissipation (PCB
Peak Diode Recovery dV/dt
c
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91266
S-Pending-Rev. A, 21-Jul-08
E
AS
I
AR
E
AR
P
D
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
100
± 20
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
W/°C
mJ
A
mJ
W
V/ns
A
UNIT
V
WORK-IN-PROGRESS
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