IRFR110, IRFU110, SiHFR110, SiHFU110
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 8.1 mH, R
G
= 25
Ω,
I
AS
= 4.3 A (see fig. 12).
c. I
SD
≤
5.6 A, dI/dt
≤
75 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
SYMBOL
T
J
, T
stg
LIMIT
- 55 to + 150
260
d
UNIT
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
TYP.
-
-
-
MAX.
110
50
5.0
°C/W
UNIT
Note
a. When mounted on 1” square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.6 A
b
100
-
2.0
-
-
-
-
1.6
-
0.13
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.54
-
V
V/°C
V
nA
µA
Ω
S
V
DS
= 50 V, I
D
= 2.6 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
180
80
15
-
-
-
6.9
16
15
9.4
4.5
7.5
-
-
-
8.3
2.3
3.8
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 5.6 A, V
DS
= 80 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 50 V, I
D
= 5.6 A,
R
G
= 24
Ω,
R
D
= 8.4
Ω,
see fig. 10
b
-
-
-
-
-
G
S
www.vishay.com
2
Document Number: 91265
S-81394-Rev. A, 21-Jul-08
VISHAY [ VISHAY TELEFUNKEN ]
