IRFR024, IRFU024, SiHFR024, SiHFU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
25
5.8
11
Single
D
FEATURES
60
0.10
• Dynamic dV/dt Rating
• Surface Mount (IRFR024/SiHFR024)
• Straight Lead (IRFU024/SiHFU024)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR024PbF
SiHFR024-E3
IRFR024
SiHFR024
DPAK (TO-252)
IRFR024TRPbF
a
SiHFR024T-E3
a
IRFR024TR
a
SiHFR024T
a
DPAK (TO-252)
-
-
IRFR024TRL
a
SiHFR024TL
a
IPAK (TO-251)
IRFU024PbF
SiHFU024-E3
IRFU024
SiHFU024
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
* Pb containing terminations are not RoHS compliant, exemptions may apply
T
C
= 25 °C
T
A
= 25 °C
E
AS
P
D
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 20
14
9.0
56
0.33
0.020
91
42
2.5
5.5
W/°C
mJ
W
V/ns
A
UNIT
V
Document Number: 91264
S-Pending-Rev. A, 17-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
VISHAY [ VISHAY TELEFUNKEN ]
