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IRFR014 参数 Datasheet PDF下载

IRFR014图片预览
型号: IRFR014
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 10 页 / 1928 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
11
3.1
5.8
Single
D
FEATURES
60
0.20
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Surface Mount (IRFR014, SiHFR014)
• Straight Lead (IRFU014, SiHFU014)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DPAK
(TO-252)
D
D
IPAK
(TO-251)
DESCRIPTION
G
G
S
G
D S
S
N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
SiHFR014-GE3
IRFR014PbF
SiHFR014-E3
IRFR014
SiHFR014
DPAK (TO-252)
SiHFR014TRL-GE3
IRFR014TRLPbF
a
SiHFR014TL-E3
a
IRFR014TRL
a
SiHFR014TL
a
DPAK (TO-252)
SiHFR014TR-GE3
IRFR014TRPbF
a
SiHFR014T-E3
a
IRFR014TR
a
SiHFR014T
a
IPAK (TO-251)
SIHFU014-GE3
IRFU014PbF
SiHFU014-E3
IRFU014
SiHFU014
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
60
± 20
7.7
4.9
31
0.20
0.020
27.4
25
2.5
4.5
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
E
AS
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
dV/dt
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 924 μH, R
g
= 25
Ω,
I
AS
= 7.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91263
S10-1122-Rev. D, 10-May-10
W/°C
mJ
W
V/ns
°C
www.vishay.com
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