IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) (Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
180
46
71
Single
D
FEATURES
500
0.13
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
SUPER-247
TM
APPLICATIONS
G
S
D
G
S
N-Channel
MOSFET
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SUPER-247
TM
IRFPS37N50APbF
SiHFPS37N50A-E3
IRFPS37N50A
SiHFPS37N50A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
500
± 30
36
23
144
3.6
1260
36
44
446
3.5
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 1.94 mH, R
G
= 25
Ω,
I
AS
= 36 A (see fig. 12).
c. I
SD
≤
36 A, dI/dt
≤
145 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91258
S-81368-Rev. B, 21-Jul-08
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