IRFP460, SiHFP460
Vishay Siliconix
10 000
8000
6000
C
iss
4000
C
oss
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
2
150
°
C
25
°
C
V
GS
= 0
V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2000
C
rss
0
10
0
91237_05
10
1
10
1
0.6
91237_07
V
DS,
Drain-to-Source
Voltage
(V)
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 20 A
V
DS
= 400
V
V
DS
= 250
V
10
3
5
Operation in this area limited
by
R
DS(on)
I
D
, Drain Current (A)
16
2
10
2
5
12
V
DS
= 100
V
8
10
µs
100
µs
2
10
5
4
For test circuit
see figure 13
2
1
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
2
5
10
ms
10
2
2
5
0
0
91237_06
1
40
80
120
160
200
91237_08
10
2
5
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91237
S-81360-Rev. A, 28-Jul-08
VISHAY [ VISHAY TELEFUNKEN ]
