IRFP460A, SiHFP460A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
105
26
42
Single
D
FEATURES
500
0.27
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
and
Avalanche Voltage and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
G
TYPICAL SMPS TOPOLOGIES
S
D
G
S
N-Channel
MOSFET
• Full Bridge
• PFC Boost
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247
IRP460APbF
SiHFP460A-E3
IRP460A
SiHFP460A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
T
C
= 25 °C
dV/dt
c
for 10 s
6-32 or M3 screw
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
20
13
80
2.2
960
20
28
280
3.8
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 4.3 mH, R
G
= 25
Ω,
I
AS
= 20 A (see fig. 12).
c. I
SD
≤
20 A, dI/dt
≤
125 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91234
S-81360-Rev. A, 28-Jul-08
www.vishay.com
1
VISHAY [ VISHAY TELEFUNKEN ]
