IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
8.7
2.2
4.1
Single
S
FEATURES
•
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
Lead (Pb)-free Available
Available
1.2
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRFL9110PbF
SiHFL9110-E3
IRFL9110
SiHFL9110
SOT-223
IRFL9110TRPbF
a
SiHFL210T-E3
a
IRFL9110TR
a
SiHFL9110T
a
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 100
± 20
- 1.1
- 0.69
- 8.8
0.025
0.017
100
- 1.1
0.31
3.1
2.0
- 5.5
- 55 to + 150
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
I
AR
Avalanche Current
c
E
AR
Peak Diode Recovery dV/dt
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 7.7 mH, R
G
= 25
Ω,
I
AS
= - 4.4 A (see fig. 12).
c. I
SD
≤
- 4.4 A, dI/dt
≤
- 75 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91196
S-81369-Rev. A, 07-Jul-08
W/°C
mJ
A
mJ
W
V/ns
°C
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