IRFL210, SiHFL210
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
-
-
-
150
0.60
0.96
A
7.7
2.0
310
1.4
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 0.96 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 3.3 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
1
Top
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10
0
150
°
C
25
°
C
10
0
10
-1
10
-1
4.5
V
20
µs
Pulse
Width
T
C
=
25 °C
10
-2
20
µs
Pulse
Width
V
DS
=
50
V
4
5
6
7
8
9
10
10
-1
91193_01
10
0
10
1
91193_03
V
DS
, Drain-to-Source
Voltage
(V)
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
I
D
, Drain Current (A)
10
0
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
I
D
= 3.3 A
3.0
V
GS
= 10
V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20
4.5
V
10
-1
20
µs
Pulse
Width
T
C
=
150 °C
10
-1
10
0
10
1
0
20 40 60
80
100 120 140 160
91193_02
V
DS,
Drain-to-Source
Voltage
(V)
91193_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
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