IRFD9120, SiHFD9120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SYMBOL
R
thJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= - 100 V, V
GS
= 0 V
V
DS
= - 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= - 10 V
I
D
= - 0.6 A
b
V
DS
= - 50 V, I
D
= - 0.60 A
b
- 100
-
- 2.0
-
-
-
-
0.71
-
- 0.10
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.60
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V
V
DS
= - 25 V
f = 1.0 MHz, see fig. 5
-
-
-
-
390
170
45
-
-
-
9.6
29
21
25
4.0
6.0
-
-
-
18
3.0
9.0
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 6.8 A, V
DS
= - 80 V
see fig. 6 and 13
b
-
-
-
V
DD
= - 50 V, I
D
= - 6.8 A
R
G
= 18
Ω,
R
D
= 7.1
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
98
0.33
- 1.0
A
- 8.0
- 6.3
200
0.66
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 1.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 6.8 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
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Document Number: 91139
S-81273-Rev. A, 16-Jun-08
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