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IRFD9120PBF 参数 Datasheet PDF下载

IRFD9120PBF图片预览
型号: IRFD9120PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 1875 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRFD9120, SiHFD9120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
18
3.0
9.0
Single
S
FEATURES
• Dynamic dV/dt Rating
0.60
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
HEXDIP
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HEXDIP
IRFD9120PbF
SiHFD9120-E3
IRFD9120
SiHFD9120
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 52 mH, R
G
= 25
Ω,
I
AS
= - 2.0 A (see fig. 12).
c. I
SD
- 6.8 A, dI/dt
110 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91139
S-81273-Rev. A, 16-Jun-08
www.vishay.com
1
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 100
± 20
- 1.0
- 0.70
- 8.0
0.0083
140
- 1.0
0.13
1.3
- 5.5
- 55 to + 175
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V