IRFD110, SiHFD110
Vishay Siliconix
350
E
AS
, Single Pulse Energy (mJ)
300
250
200
150
100
50
0
V
DD
= 25
V
25
50
75
100
I
D
0.82 A
1.4 A
Bottom 2.0 A
Top
125
150
175
91127_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12
V
10
V
Q
GS
Q
G
0.2
µF
0.3
µF
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91127
S-81263-Rev. A, 21-Jul-08