IRFD020, SiHFD020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
7.1
7.1
Single
D
FEATURES
50
0.10
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced
line of power MOSFET transistors. The efficient geometry
and unique processing of the HVMDIP design achieves
very low on-state resistance combined with high
transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of
MOSFETs such as voltage control, very fast switching, ease
of paralleling, and temperature stability of the electrical
parameters.
The HVMDIP 4 pin, dual-in-line package brings the
advantages of HVMDIPs to high volume applications where
automatic PC board insertion is desireable, such as circuit
boards for computers, printers, telecommunications
equipment, and consumer products. Their compatibility with
automatic insertion equipment, low-profile and end
stackable features represent the stat-of-the-art in power
device packaging.
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD020PbF
SiHFD020-E3
IRFD020
SiHFD020
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
a
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Linear Derating Factor
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche
Maximum Power Dissipation
Current)
c
T
C
= 25 °C
for 10 s
L = 100 μH
I
LM
I
L
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
50
± 20
2.4
1.5
19
0.0080
19
2.2
1.0
- 55 to + 150
300
d
W/°C
A
W
°C
A
UNIT
V
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. T
J
= 25 °C to 150 °C
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V
DD
= 25 V, starting T
J
= 25 °C, L = 100 μH, R
g
= 25
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91465
S11-0915-Rev. A, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VISHAY [ VISHAY TELEFUNKEN ]
