IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
42
10
20
Single
D
FEATURES
600
1.2
• Low Gate Charge Q
g
results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully
Characterized
Capacitance
Avalanche Voltage and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
and
Available
RoHS*
COMPLIANT
D
2
PAK (TO-263)
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptible Power Supply
• High Speed Power Switching
G D
S
S
N-Channel
MOSFET
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRFBC40ASPbF
SiHFBC40AS-E3
IRFBC40AS
SiHFBC40AS
D
2
PAK (TO-263)
IRFBC40ASTRLPbF
a
SiHFBC40ASTL-E3
a
IRFBC40ASTRL
a
SiHFBC40ASTL
a
D
2
PAK (TO-263)
IRFBC40ASTRRPbF
a
SiHFBC40ASTR-E3
a
IRFBC40ASTRR
a
SiHFBC40ASTR
a
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 29.6 mH, R
G
= 25
Ω,
I
AS
= 6.2 A (see fig. 12).
c. I
SD
≤
6.2 A, dI/dt
≤
88 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40A/SiHFBC40A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91113
S-Pending-Rev. A, 23-Jun-08
www.vishay.com
1
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
6.2
3.9
25
1.0
570
6.2
13
125
6.0
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
WORK-IN-PROGRESS
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