IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
39
10
19
Single
D
FEATURES
600 V
1.2
•
•
•
•
•
•
•
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30 V, V
GS
Rating
Reduced C
iss
, C
oss
, C
rss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
G
S
G
D
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFBC40LCPbF
SiHFBC40LC-E3
IRFBC40LC
SiHFBC40LC
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
± 30
6.2
3.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 25 mH, R
G
= 25
Ω,
I
AS
= 6.2 A (see fig. 12).
c. I
SD
≤
6.2 A, dI/dt
≤
80 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91114
S-81567-Rev. A, 28-Jul-08
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