IRF9620, SiHF9620
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
22
12
10
Single
S
FEATURES
- 200
1.5
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9620PbF
SiHF9620-E3
IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery dV/dt
b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
40
- 5.0
- 55 to + 150
300
c
10
1.1
W/°C
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. I
SD
≤
- 3.5 A, dI/dt
≤
95 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
c. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91082
S-81272-Rev. A, 16-Jun-08
www.vishay.com
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