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IRF9530PBF 参数 Datasheet PDF下载

IRF9530PBF图片预览
型号: IRF9530PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 8 页 / 567 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRF9530, SiHF9530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
38
6.8
21
Single
S
FEATURES
- 100
0.30
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9530PbF
SiHF9530-E3
IRF9530
SiHF9530
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
- 100
± 20
- 12
- 8.2
- 48
0.59
400
- 12
8.8
88
- 5.5
- 55 to + 175
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 4.2 mH, R
G
= 25
Ω,
I
AS
= - 12 A (see fig. 12).
c. I
SD
- 12 A, dI/dt
140 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91076
S-81272-Rev. A, 16-Jun-08
www.vishay.com
1