IRF840, SiHF840
Vishay Siliconix
2500
2000
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
150
°
C
10
1
25
°
C
1500
1000
C
oss
500
C
rss
0
10
0
10
0
10
1
0.4
91070_07
V
GS
= 0
V
0.6
0.8
1.0
1.2
1.4
91070_05
V
DS,
Drain-to-Source
Voltage
(V)
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source
Voltage
(V)
I
D
=
8.0
A
V
DS
= 400
V
V
DS
= 250
V
V
DS
= 100
V
10
2
5
Operation in this area limited
by
R
DS(on)
10
µs
100
µs
I
D
, Drain Current (A)
16
2
10
5
12
2
1
ms
10
ms
8
1
5
4
For test circuit
see figure 13
2
0
0
91070_06
15
30
45
60
75
91070_08
0.1
0.1
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
2
5
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
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Document Number: 91070
S-81290-Rev. B, 16-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
