IRF840A, SiHF840A
Vishay Siliconix
10
5
10
4
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
2
10
T
J
= 150
°
C
T
J
= 25
°
C
1
10
3
10
2
C
oss
10
C
rss
1
1
91065_05
0.1
10
10
2
10
3
91065_07
V
GS
= 0
V
0.2
0.5
0.8
1.1
1.4
V
DS,
Drain-to-Source
Voltage
(V)
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source
Voltage
(V)
I
D
=
8.0
A
V
DS
= 400
V
V
DS
= 250
V
10
2
Operation in this area limited
by
R
DS(on)
10
µs
I
D
, Drain Current (A)
16
V
DS
= 100
V
10
100
µs
1
ms
1
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
10
10
2
10
3
10
4
12
8
4
For test circuit
see figure 13
0
0
91065_06
0.1
10
20
30
40
91065_08
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91065
S-81275-Rev. A, 16-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
