IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
R
D
5.0
V
DS
V
GS
D.U.T.
+
-
V
DD
4.0
R
G
I
D
, Drain Current (A)
10
V
3.0
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
2.0
V
DS
1.0
90
%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91062
S-81352-Rev. A, 16-Jun-08
www.vishay.com
5
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