IRF820, SiHF820
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
24
3.3
13
Single
D
FEATURES
500
3.0
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
G
S
G
D
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF820PbF
SiHF820-E3
IRF820
SiHF820
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
Repetitive Avalanche Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Peak Diode Recovery
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 20
2.5
1.6
8.0
0.40
210
2.5
5.0
50
3.5
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 60 mH, R
G
= 25
Ω,
I
AS
= 2.5 A (see fig. 12).
c. I
SD
≤
2.5 A, dI/dt
≤
50 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91059
S-81276-Rev. A, 16-Jun-08
www.vishay.com
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