IRF730, SiHF730
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
4.5
V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10
1
10
1
150
°
C
25
°
C
10
0
10
0
20
µs
Pulse
Width
T
C
=
25 °C
10
-1
91054_01
20
µs
Pulse
Width
V
DS
=
50
V
10
-1
4
91054_03
10
0
10
1
5
6
7
8
9
10
V
DS
, Drain-to-Source
Voltage
(V)
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
1
I
D
, Drain Current (A)
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 10 A
V
GS
= 10
V
4.5
V
10
0
20
µs
Pulse
Width
T
C
=
150 °C
10
-1
91054_02
10
0
10
1
0.0
- 60 - 40 - 20 0
20 40 60
80
100 120 140 160
V
DS,
Drain-to-Source
Voltage
(V)
91054_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91047
S-81291-Rev. A, 16-Jun-08
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