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IRF640S 参数 Datasheet PDF下载

IRF640S图片预览
型号: IRF640S
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 8 页 / 2115 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
70
13
39
Single
D
FEATURES
200
0.18
Surface Mount
Low-Profile Through-Hole
Available in Tape and Reel
Dynamic dV/dt Rating
150 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
I
2
PAK
(TO-262)
D
2
PAK
(TO-263)
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D
2
PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRF640L/SiHF640L) is available for low-profile applications.
G
G
D
S
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
D
2
PAK (TO-263)
IRF640SPbF
SiHF640S-E3
IRF640S
SiHF640S
D
2
PAK (TO-263)
IRF640STRLPbF
a
SiHF6340STL-E3
a
IRF640STRL
a
SiHF640STL
a
D
2
PAK (TO-263)
IRF640STRRPbF
a
SiHF640STR-E3
a
IRF640STRR
a
SiHF640STR
a
I
2
PAK (TO-262)
IRF640LPbF
SiHF640L-E3
IRF640L
SiHF640L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
C
= 25 °C
T
A
= 25 °C
Current
a, e
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
200
± 20
18
11
72
1.0
580
18
13
3.1
130
5.0
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.7 mH, R
G
= 25
Ω,
I
AS
= 18 A (see fig. 12).
c. I
SD
18 A, dI/dt
150 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91037
S-81241-Rev. A, 07-Jul-08
www.vishay.com
1