IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
2
1200
1000
C
iss
I
D
, Drain-to-Source Current (A)
10
T
J
= 175
°
C
C, Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
800
C
oss
600
400
200
0
C
rss
1
T
J
= 25
°
C
20
µs
Pulse
Width
V
DS
=
50
V
5.0
6.0
7.0
8.0
9.0
0.1
4.0
91033_03
1
91033_05
10
10
2
10
3
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 7.9 A
V
GS
= 10
V
20
I
D
= 4.8 A
V
DS
= 200
V
V
DS
= 125
V
16
12
V
DS
= 50
V
8
4
For test circuit
see figure 13
0.0
- 60 - 40- 20 0 20 40 60
80
100 120 140 160 180
0
0
91033_06
10
20
30
40
91033_04
T
J,
Junction Temperature (°C)
Q
G
, Total Gate Charge (nC)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
