IRF530, SiHF530
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
100
-
-
-
V
V/°C
V
-
0.12
2.0
-
-
-
-
-
-
4.0
VGS
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
=
20 V
-
100
25
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
250
0.16
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
5.1
S
VGS = 0 V,
VDS = 25 V,
Input Capacitance
Ciss
Coss
Crss
-
-
-
670
250
60
-
-
-
Output Capacitance
pF
Reverse Transfer Capacitance
f = 1.0 MHz, see fig. 5
Total Gate Charge
Qg
-
-
-
-
26
ID = 14 A, VDS = 80 V,
see fig. 6 and 13b
Gate-Source Charge
Qgs
VGS = 10 V
5.5
nC
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgd
td(on)
tr
-
-
-
-
-
-
11
-
10
34
23
24
-
VDD = 50 V, ID = 14 A
G = 12 Ω, RD = 3.6 Ω, see fig. 10b
ns
R
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
-
-
14
56
A
G
Pulsed Diode Forward Currenta
ISM
S
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
2.5
280
1.7
V
Body Diode Voltage
VSD
trr
-
-
-
-
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
150
0.85
ns
µC
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91019
S-81240-Rev. A, 16-Jun-08
VISHAY [ VISHAY ]
