IRF510, SiHF510
Vishay Siliconix
V
DS
V
GS
6.0
5.0
R
G
R
D
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
10
V
4.0
3.0
2.0
V
DS
1.0
0.0
25
50
75
100
125
150
175
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
90
%
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
91015_09
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
0
-
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-5
10
-4
10
-3
10
-2
0.1
1
10
0.1
Single Pulse
(Thermal Response)
10
-2
91015_11
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
V
DS
t
p
V
DD
D.U.T
I
AS
+
-
V
DD
V
DS
10
V
t
p
0.01
Ω
A
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91015
S-81377-Rev. A, 30-Jun-08
www.vishay.com
5
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