ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Peak pulsed current
Continuous forward current per
channel
Power dissipation
Derate linearly from 25 °C
P
diss
1.0
µs,
300 pps
Test condition
Symbol
V
R
Value
6.0
1.0
30
50
0.66
Unit
V
A
mA
mW
mW/°C
Output
Parameter
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Power dissipation per channel
Derate linearly from 25 °C
Test condition
Symbol
BV
CEO
BV
ECO
P
diss
Value
70
7.0
125
1.67
Unit
V
V
mW
mW/°C
Coupler
Parameter
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time from 260 °C
T
stg
T
amb
T
sld
Test condition
Symbol
P
tot
Value
300
Unit
mW
4.0
- 55 to + 150
- 55 to + 100
10
mW/°C
°C
°C
sec.
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I
F
= 10 mA
V
R
= 6.0 V
V
R
= 0
Symbol
V
F
I
R
C
O
Min
Typ.
1.2
0.1
25
Max
1.55
100
Unit
V
µA
pF
www.vishay.com
2
Document Number 83647
Rev. 1.4, 26-Oct-04
VISHAY [ VISHAY TELEFUNKEN ]
