IL410/ IL4108
Vishay Semiconductors
Order Information
Part
IL410
IL4108
IL410-X006
IL410-X007
IL410-X009
IL4108-X006
IL4108-X007
IL4108-X009
Remarks
600 V V
DRM
, DIP-6
800 V V
DRM
, DIP-6
600 V V
DRM
, DIP-6 400 mil (option 6)
600 V V
DRM
, SMD-6 (option 7)
600 V V
DRM
, SMD-6 (option 9)
800 V V
DRM
, DIP-6 400 mil (option 6)
800 V V
DRM
, SMD-6 (option 7)
800 V V
DRM
, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
1.33
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Peak off-state voltage
RMS on-state current
Single cycle surge current
Total power dissipation
Derate from 25 °C
P
diss
Test condition
Part
IL410
IL4108
Symbol
V
DM
V
DM
I
TM
Value
600
800
300
3.0
500
6.6
Unit
V
V
mA
A
mW
mW/°C
Coupler
Parameter
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
Isolation test voltage (between t = 1.0 min.
emitter and detector, climate per
DIN 500414, part 2, Nov. 74)
Pollution degree (DIN VDE
0109)
Creepage
Clearance
2
≥
7.0
≥
7.0
mm
mm
www.vishay.com
2
Document Number 83627
Rev. 1.4, 26-Apr-04
VISHAY [ VISHAY TELEFUNKEN ]
