欢迎访问ic37.com |
会员登录 免费注册
发布采购

IL206AT 参数 Datasheet PDF下载

IL206AT图片预览
型号: IL206AT
PDF下载: 下载PDF文件 查看货源
内容描述: 光电耦合器,光电晶体管输出,与采用SOIC - 8封装基地连接 [Optocoupler, Phototransistor Output, With Base Connection in SOIC-8 package]
分类和应用: 晶体光电晶体管光电晶体管
文件页数/大小: 7 页 / 260 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号IL206AT的Datasheet PDF文件第2页浏览型号IL206AT的Datasheet PDF文件第3页浏览型号IL206AT的Datasheet PDF文件第4页浏览型号IL206AT的Datasheet PDF文件第5页浏览型号IL206AT的Datasheet PDF文件第6页浏览型号IL206AT的Datasheet PDF文件第7页  
IL205AT/ 206AT/ 207AT/ 208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection in
SOIC-8 package
Features
• High BV
CEO
, 70 V
• Isolation Test Voltage, 3000 V
RMS
• Industry Standard SOIC-8A Surface
e3
Mountable Package
• Compatible with Dual Wave, Vapor
Phase and IR Reflow Soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
1
K
2
NC
3
NC
4
8
7
6
5
NC
B
C
E
i179002
Agency Approvals
• UL1577, File No. E52744 System Code Y
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the adja-
cent circuits. The high BV
CEO
of 70 V gives a higher
safety margin compared to the industry standard
30 V.
Description
The IL205AT/ IL206AT/ IL207AT/ IL208AT are opti-
cally coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal infor-
mation, including a DC level, can be transmitted by
the device while maintaining a high degree of electri-
cal isolation between input and output. This family
comes in a standard SOIC-8A small outline package
for surface mounting which makes them ideally suited
for high density application with limited space. In addi-
tion to eliminating through-hole requirements, this
package conforms to standards for surface mounted
devices.
Order Information
Part
IL205AT
IL206AT
IL207AT
IL208AT
Available on Tape and Reel only.
For additional information on the available options refer to
Option Information.
Remarks
CTR 40 - 80 %, SOIC-8
CTR 63 - 125 %, SOIC-8
CTR 100 - 200 %, SOIC-8
CTR 160 - 320 %, SOIC-8
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V
R
I
F
P
diss
Value
6.0
60
90
1.2
Unit
V
mA
mW
mW/°C
Document Number 83614
Rev. 1.6, 18-Apr-05
www.vishay.com
1