HFA16TA60C
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 8 A
FEATURES
•
•
•
•
•
•
Base
common
cathode
2
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
Anode
1
2
Common
cathode
3
DESCRIPTION
Anode
TO-220AB
PRODUCT SUMMARY
V
R
V
F
at 8 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
dI
(rec)M
/dt
600 V
1.7 V
2x8A
18 ns
150 °C
65 nC
240 A/µs
HFA16TA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A per leg continuous
current, the HFA16TA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA16TA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
8
16
60
24
36
14
- 55 to + 150
W
°C
A
UNITS
V
Document Number: 93072
Revision: 29-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
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