欢迎访问ic37.com |
会员登录 免费注册
发布采购

HFA08TB60PBF 参数 Datasheet PDF下载

HFA08TB60PBF图片预览
型号: HFA08TB60PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 超快软恢复二极管,一个8 [Ultrafast Soft Recovery Diode, 8 A]
分类和应用: 整流二极管局域网超快软恢复二极管快速软恢复二极管
文件页数/大小: 6 页 / 138 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号HFA08TB60PBF的Datasheet PDF文件第2页浏览型号HFA08TB60PBF的Datasheet PDF文件第3页浏览型号HFA08TB60PBF的Datasheet PDF文件第4页浏览型号HFA08TB60PBF的Datasheet PDF文件第5页浏览型号HFA08TB60PBF的Datasheet PDF文件第6页  
HFA08TB60PbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
Available
RoHS*
COMPLIANT
Base
cathode
2
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Cathode
3
Anode
TO-220AC
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08TB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
PRODUCT SUMMARY
V
R
V
F
at 8 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical)
I
RRM
600 V
1.7 V
8A
18 ns
150 °C
65 nC
240 A/µs
5.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
8
60
24
36
14
- 55 to + 150
W
°C
A
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94047
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1