FEP(F,B)16AT thru FEP(F,B)16JT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
100
50 - 400
V
500 - 600
V
10
T
J
= 125 °C
16
12
Instantaneous Reverse Leakage
Current (µA)
Resistive or Inductive Load
Average Forward Current (A)
1
T
J
= 100 °C
8
T
J
= 25 °C
0.1
4
0
0
50
100
150
0.01
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
300
1000
T
C
= 100 °C
8.3
ms Single Half Sine-Wave
50 - 400
V
500 - 600
V
T
J
= 125 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
200
Junction Capacitance (pF)
250
150
100
100
50
0
1
10
100
10
0.1
1
10
100
Number
of Cycles at 60 Hz
Reverse
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
Instantaneous Forward Current (A)
T
J
= 125 °C
10
T
J
= 25 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
50 - 400
V
300 - 400
V
500 - 600
V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
Instantaneous Forward
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Document Number: 88596
Revision: 07-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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