ES2A thru ES2D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. reverse recovery time
TEST CONDITIONS
I
F
= 0.5 A, I
R
= 1.0 A,
l
rr
= 0.25 A
I
F
= 2.0 A, V
R
= 30 V,
dI/dt = 50 A/µs,
I
r
= 10 % I
RM
I
F
= 2.0 A, V
R
= 30 V,
dI/dt = 50 A/µs,
I
r
= 10 % I
RM
4.0 V, 1 MHz
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
t
rr
ES2A
ES2B
20
30
50
10
25
18
ES2C
ES2D
UNIT
ns
Maximum reverse recovery time
t
rr
ns
Maximum stored charge
Typical junction capacitance
Note:
Q
rr
C
J
nC
pF
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note:
(1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas
SYMBOL
R
θJA
R
θJL
ES2A
ES2B
75
20
ES2C
ES2D
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
ES2D-E3/52T
ES2D-E3/5BT
ES2DHE3/52T
(1)
ES2DHE3/5BT
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
52T
5BT
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.0
60
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
50
8.3
ms Single Half Sine-Wave
at T
L
= 110 °C
2.0
40
30
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
80
90
100
110
120
130
140
150
20
10
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88587
Revision: 27-Aug-07
VISHAY [ VISHAY TELEFUNKEN ]
