ES2A thru ES2D
Vishay General Semiconductor
100
60
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Junction Capacitance (pF)
1.4
50
40
T
J
= 125 °C
1
T
J
= 100 °C
30
20
0.1
T
J
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
10
0
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10 000
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
1000
T
J
= 125 °C
T
J
= 100 °C
100
10
T
J
= 25 °C
1
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 MIN.
(1.52 MIN.)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 88587
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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