ES1A thru ES1D
Vishay General Semiconductor
100
14
12
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
Junction Capacitance (pF)
1.2
1.4
10
8
6
4
2
0
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
100
T
J
= 125 °C
T
J
= 100 °C
10
Mounted on 0.2 x 0.2" (5 x 7 mm)
Copper Pad Areas
10
1
T
J
= 25 °C
0.1
0
20
40
60
80
100
1
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88586
Revision: 27-Aug-08
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