DG508A_MIL/509A_MIL
Vishay Siliconix
TEST CIRCUITS
+15 V
+2.4 V
EN
V+
All S and D
a
+5 V
Logic
Input
3V
50%
0V
t
r
<20 ns
t
f
<20 ns
A
0
A
1
A
2
DG508A_MIL
DG509A_MIL
D
b
, D
GND
V–
300
W
Switch
Output
35 pF
V
O
0V
t
OPEN
V
O
V
S
80%
50
W
–15 V
FIGURE 4.
Break-Before-Make Interval
+15 V
R
g
S
X
EN
V
g
A
0
Channel
Select
A
1
A
2
GND
V–
D
V
O
C
L
10 nF
Switch
Output
DV
O
DV
O
is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = C
L
x
DV
O
V+
Logic
Input
3V
OFF
0V
ON
OFF
–15 V
FIGURE 5.
Charge Injection
+15 V
+15 V
V
IN
V
S
R
g
= 50
W
S
X
S
8
A
0
A
1
A
2
GND
EN
V–
–15 V
Off Isolation = 20 log
V
OUT
V
IN
Crosstalk = 20 log
R
L
1 kW
D
V
O
R
g
= 50
W
V+
V
S
V
IN
S
1
S
X
S
8
A
0
A
1
A
2
GND
EN
V–
–15 V
V
OUT
V
IN
R
L
1 kW
D
V
O
V+
FIGURE 6.
Off Isolation
FIGURE 7.
Crosstalk
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S
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Document Number: 70067
S-00405—Rev. C, 21-Feb-00