DG444/445
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
16-Pin Narrow Body SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 8 mW/_C above 75_C
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
V
ANALOG
r
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
I
S
= –10 mA, V
D
=
"8.5
V
V+ = 13.5 V, V– = –13.5 V
V+ = 16.5, V– = –16.5 V
,
V
D
=
"15.5
V V
S
=
#15.5
V
15 5 V,
15 5
V+ = 16.5 V, V– = –16.5 V
V
S
= V
D
=
"15.5
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
–0.5
–5
–0.5
–5
–0.5
–10
–15
50
"0.01
"0.01
"0.08
15
85
100
0.5
5
0.5
5
0.5
10
nA
A
V
W
D Suffix
–40 to 85_C
Symbol
V+ = 15 V, V– = –15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Digital Control
Input Current V
IN
Low
Input Current V
IN
High
I
IL
I
IH
V
IN
under test = 0.8 V
All Other = 2.4 V
V
IN
under test = 2.4 V
All Other = 0.8 V
Full
Full
–500
–500
–0.01
0.01
500
nA
500
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
e
Off Isolation
e
Crosstalk (Channel-to-Channel)
d
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
t
ON
t
OFF
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 1 kW , C
L
= 35 pF
V
S
=
"10
V, See Figure 2
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
W
R
L
= 50
W,
C
L
= 5 pF, f = 1 MHz
W
,
f = 1 MHz
V
ANALOG
= 0 V
DG444
DG445
Room
Room
Room
Room
Room
Room
Room
Room
Room
120
110
160
–1
60
100
4
4
16
pF
F
250
140
210
pC
dB
ns
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I–
I
L
I
GND
Room
Full
V+ 16 5 V, V
V = 16.5 V, V– = –16.5 V
16 5
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
–1
–5
–1
–5
0.001
–0.0001
1
5
mA
A
1
5
0.001
–0.001
www.vishay.com
S
FaxBack 408-970-5600
4-2
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
VISHAY [ VISHAY TELEFUNKEN ]
