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DG419DY-T1-E3 参数 Datasheet PDF下载

DG419DY-T1-E3图片预览
型号: DG419DY-T1-E3
PDF下载: 下载PDF文件 查看货源
内容描述: 精密CMOS模拟开关 [Precision CMOS Analog Switches]
分类和应用: 开关
文件页数/大小: 16 页 / 304 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号DG419DY-T1-E3的Datasheet PDF文件第1页浏览型号DG419DY-T1-E3的Datasheet PDF文件第2页浏览型号DG419DY-T1-E3的Datasheet PDF文件第3页浏览型号DG419DY-T1-E3的Datasheet PDF文件第5页浏览型号DG419DY-T1-E3的Datasheet PDF文件第6页浏览型号DG419DY-T1-E3的Datasheet PDF文件第7页浏览型号DG419DY-T1-E3的Datasheet PDF文件第8页浏览型号DG419DY-T1-E3的Datasheet PDF文件第9页  
DG417, DG418, DG419
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Symbol
Dynamic Characteristics
Source Off
C
S(off)
Capacitance
Drain Off Capacitance
Channel On
Capacitance
Power Supplies
Positive Supply Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.001
- 0.001
0.001
- 0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
C
D(off)
C
D(on)
f = 1 MHz, V
S
=
0
V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Typ.
c
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.
d
Max.
d
Min.
d
Max.
d
Unit
Room
f = 1 MHz, V
S
=
0
V
DG417
DG418
DG417
DG418
DG419
Room
Room
Room
8
8
30
35
pF
SPECIFICATIONS
a
for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply
Current
Ground
Current
t
ON
t
OFF
t
D
Q
R
L
= 300
,
C
L
= 35 pF, V
S
=
8
V
See Switching Time Test Circuit
DG419 Only
R
L
= 300
,
C
L
= 35 pF
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Room
Room
Room
Room
110
40
60
5
pC
ns
Symbol
V
ANALOG
R
DS(on)
I
S
= - 10 mA, V
D
=
3.8
V
V+ = 10.8 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp.
b
Full
Room
40
Typ.
c
A Suffix
- 55 °C to 125 °C
Min.
d
0
Max.
d
12
D Suffix
- 40 °C to 85 °C
Min.
d
0
Max.
d
12
Unit
V
I+
I-
I
L
I
GND
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Room
Room
Room
0.001
- 0.001
µA
0.001
- 0.001
Notes:
a. Refer to Process Option Flowchart.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10